Infineon Technologies - IPD048N06L3GBTMA1

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IPD048N06L3GBTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD048N06L3GBTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Case Connection: DRAIN; Qualification: Not Qualified;
Datasheet IPD048N06L3GBTMA1 Datasheet
In Stock176
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 90 A
Maximum Pulsed Drain Current (IDM): 360 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0048 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 68 mJ
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
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