Infineon Technologies - IPD25N06S4L30ATMA2

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IPD25N06S4L30ATMA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD25N06S4L30ATMA2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29 W; Case Connection: DRAIN; Transistor Element Material: SILICON;
Datasheet IPD25N06S4L30ATMA2 Datasheet
In Stock24,775
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 25 A
Maximum Pulsed Drain Current (IDM): 92 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 29 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .03 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 12 mJ
Maximum Feedback Capacitance (Crss): 32 pF
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101
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