IPD30N10S3L34ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPD30N10S3L34ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Transistor Element Material: SILICON; Case Connection: DRAIN;
Datasheet	IPD30N10S3L34ATMA1 Datasheet
In Stock	26,305

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	120 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	57 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0418 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	138 mJ
Other Names:	IPD30N10S3L-34TR IPD30N10S3L-34DKR IPD30N10S3L34ATMA1DKR IPD30N10S3L-34CT-ND IPD30N10S3L34 SP000261248 IPD30N10S3L-34DKR-ND IPD30N10S3L34ATMA1CT IPD30N10S3L-34 IPD30N10S3L-34TR-ND IPD30N10S3L-34CT IPD30N10S3L-34-ND IPD30N10S3L34ATMA1TR
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	100 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	30 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
26,305	-	-

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