Infineon Technologies - IPD60R180P7SAUMA1

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IPD60R180P7SAUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPD60R180P7SAUMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Minimum Operating Temperature: -40 Cel; Maximum Drain-Source On Resistance: .18 ohm;
Datasheet IPD60R180P7SAUMA1 Datasheet
In Stock13,135
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Pulsed Drain Current (IDM): 53 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .18 ohm
Moisture Sensitivity Level (MSL): 3
Avalanche Energy Rating (EAS): 56 mJ
Other Names: SP001658138
IPD60R180P7SAUMA1DKR
IPD60R180P7SAUMA1CT
IPD60R180P7SAUMA1-ND
IPD60R180P7SAUMA1TR
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 600 V
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