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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPD90N06S407ATMA2 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 90 A; |
| Datasheet | IPD90N06S407ATMA2 Datasheet |
| In Stock | 10,579 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 90 A |
| Maximum Pulsed Drain Current (IDM): | 360 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 79 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0069 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 67 mJ |
| Other Names: |
IPD90N06S407ATMA2-ND 448-IPD90N06S407ATMA2CT 448-IPD90N06S407ATMA2TR 448-IPD90N06S407ATMA2DKR SP001028680 INFINFIPD90N06S407ATMA2 2156-IPD90N06S407ATMA2 |
| Maximum Feedback Capacitance (Crss): | 70 pF |
| JEDEC-95 Code: | TO-252 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Reference Standard: | AEC-Q101 |
