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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IPG20N06S2L65AUMA1 |
Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .065 ohm; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-F8; |
Datasheet | IPG20N06S2L65AUMA1 Datasheet |
In Stock | 1,030 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 40 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 20 A |
Maximum Pulsed Drain Current (IDM): | 80 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 55 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Reference Standard: | AEC-Q101 |
Maximum Drain-Source On Resistance: | .065 ohm |