Infineon Technologies - IPI80N08S4-06

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IPI80N08S4-06 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPI80N08S4-06
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-609 Code: e3; Terminal Finish: TIN;
Datasheet IPI80N08S4-06 Datasheet
In Stock585
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 150 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0058 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 270 mJ
Maximum Feedback Capacitance (Crss): 150 pF
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 80 V
Reference Standard: AEC-Q101
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