IPP100N08S2L07AKSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPP100N08S2L07AKSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Drain Current (ID): 100 A; Minimum DS Breakdown Voltage: 75 V;
Datasheet	IPP100N08S2L07AKSA1 Datasheet
In Stock	602

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	810 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	100 A
JEDEC-95 Code:	TO-220AB
Maximum Pulsed Drain Current (IDM):	400 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	75 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance:	.0068 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
602	$2.160	$1,300.320

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