Infineon Technologies - IPP200N25N3GXKSA1

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IPP200N25N3GXKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPP200N25N3GXKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet IPP200N25N3GXKSA1 Datasheet
In Stock928
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 64 A
Maximum Pulsed Drain Current (IDM): 256 A
Surface Mount: NO
Terminal Finish: Tin (Sn)
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .02 ohm
Avalanche Energy Rating (EAS): 320 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 250 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
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