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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IPTG210N25NM3FD |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | IPTG210N25NM3FD Datasheet |
| In Stock | 187 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 610 mJ |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Feedback Capacitance (Crss): | 11 pF |
| Maximum Drain Current (ID): | 77 A |
| Maximum Pulsed Drain Current (IDM): | 308 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 8 |
| Minimum DS Breakdown Voltage: | 250 V |
| Maximum Power Dissipation (Abs): | 375 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .021 ohm |
