Infineon Technologies - IPW65R660CFD

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IPW65R660CFD by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPW65R660CFD
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-247;
Datasheet IPW65R660CFD Datasheet
In Stock401
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 17 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 63 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .66 ohm
Avalanche Energy Rating (EAS): 115 mJ
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 650 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 6 A
Peak Reflow Temperature (C): NOT SPECIFIED
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