Infineon Technologies - IQE006NE2LM5CG

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IQE006NE2LM5CG by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IQE006NE2LM5CG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Maximum Feedback Capacitance (Crss): 195 pF; Maximum Drain Current (ID): 298 A;
Datasheet IQE006NE2LM5CG Datasheet
In Stock215
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 298 A
Maximum Pulsed Drain Current (IDM): 1192 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 89 W
Terminal Position: TRIPLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PTSO-N3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .8 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 140 mJ
Maximum Feedback Capacitance (Crss): 195 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 25 V
Maximum Drain Current (Abs) (ID): 298 A
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Pricing (USD)

Qty. Unit Price Ext. Price
215 $1.881 $404.415

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