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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IRF120 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Terminal Position: BOTTOM; Package Shape: ROUND; |
Datasheet | IRF120 Datasheet |
In Stock | 1,317 |
NAME | DESCRIPTION |
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Package Body Material: | METAL |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 9.2 A |
Maximum Pulsed Drain Current (IDM): | 37 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 40 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | O-MBFM-P2 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | PIN/PEG |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .27 ohm |
JEDEC-95 Code: | TO-204AA |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 100 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 8 A |