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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRF1404ZS |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Drain Current (ID): 190 A; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | IRF1404ZS Datasheet |
| In Stock | 979 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 220 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (ID): | 190 A |
| Maximum Drain Current (Abs) (ID): | 190 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Moisture Sensitivity Level (MSL): | 1 |









