IRF250P224 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF250P224
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .012 ohm; Minimum DS Breakdown Voltage: 250 V; Terminal Form: THROUGH-HOLE;
Datasheet	IRF250P224 Datasheet
In Stock	1,925

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	96 A
Maximum Pulsed Drain Current (IDM):	384 A
Surface Mount:	NO
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.012 ohm
Avalanche Energy Rating (EAS):	496 mJ
Other Names:	448-IRF250P224 IRF250P224-ND SP001582438 2156-IRF250P224
JEDEC-95 Code:	TO-247AC
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	250 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,925	-	-

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

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