Infineon Technologies - IRF2804STRL7PP

IRF2804STRL7PP by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF2804STRL7PP
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Maximum Feedback Capacitance (Crss): 970 pF; Moisture Sensitivity Level (MSL): 1;
Datasheet IRF2804STRL7PP Datasheet
In Stock2,087
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 160 A
Maximum Pulsed Drain Current (IDM): 1360 A
Surface Mount: YES
Terminal Finish: MATTE TIN OVER NICKEL
No. of Terminals: 6
Maximum Power Dissipation (Abs): 330 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0016 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 630 mJ
Maximum Feedback Capacitance (Crss): 970 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Peak Reflow Temperature (C): 260
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