Infineon Technologies - IRF3515S

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IRF3515S by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF3515S
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 41 A;
Datasheet IRF3515S Datasheet
In Stock489
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 200 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 41 A
Maximum Drain Current (Abs) (ID): 41 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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