Infineon Technologies - IRF460

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IRF460 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF460
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: PIN/PEG; Package Shape: ROUND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRF460 Datasheet
In Stock459
NAME DESCRIPTION
Package Body Material: METAL
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 21 A
Maximum Pulsed Drain Current (IDM): 84 A
Surface Mount: NO
No. of Terminals: 2
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .31 ohm
Avalanche Energy Rating (EAS): 1200 mJ
JEDEC-95 Code: TO-204AE
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
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