Infineon Technologies - IRF540NSTRRHR

IRF540NSTRRHR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF540NSTRRHR
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 33 A; Transistor Application: SWITCHING;
Datasheet IRF540NSTRRHR Datasheet
In Stock1,002
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 33 A
Maximum Pulsed Drain Current (IDM): 110 A
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .044 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 185 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 100 V
Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
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