IRF5EA1310 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF5EA1310
Description	N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Terminals: 28;
Datasheet	IRF5EA1310 Datasheet
In Stock	444

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	73 mJ
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	23 A
Maximum Pulsed Drain Current (IDM):	92 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	28
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	S-CQCC-N28
No. of Elements:	4
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.036 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
444	-	-

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;

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