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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IRF6156 |
Description | N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Application: SWITCHING; No. of Elements: 2; |
Datasheet | IRF6156 Datasheet |
In Stock | 837 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 40 |
Configuration: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 6 |
Minimum DS Breakdown Voltage: | 20 V |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 2.5 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY |
JESD-30 Code: | R-PBGA-B6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | BALL |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Peak Reflow Temperature (C): | 260 |
Maximum Drain-Source On Resistance: | .04 ohm |