Infineon Technologies - IRF6156

IRF6156 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF6156
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Application: SWITCHING; No. of Elements: 2;
Datasheet IRF6156 Datasheet
In Stock837
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: R-PBGA-B6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .04 ohm
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