IRF6623TRPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF6623TRPBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Avalanche Energy Rating (EAS): 43 mJ; Maximum Operating Temperature: 150 Cel;
Datasheet	IRF6623TRPBF Datasheet
In Stock	466

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	16 A
Maximum Pulsed Drain Current (IDM):	120 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	3
Maximum Power Dissipation (Abs):	42 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0057 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	43 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e1
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	55 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
466	$0.645	$300.570

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