Infineon Technologies - IRF6674MTR1PBF

IRF6674MTR1PBF by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRF6674MTR1PBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Maximum Pulsed Drain Current (IDM): 134 A; Minimum DS Breakdown Voltage: 60 V;
Datasheet IRF6674MTR1PBF Datasheet
In Stock127
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 13.4 A
Maximum Pulsed Drain Current (IDM): 134 A
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 89 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .011 ohm
Avalanche Energy Rating (EAS): 98 mJ
Maximum Feedback Capacitance (Crss): 105 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 60 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
127 - -

Popular Products

Category Top Products