Infineon Technologies - IRF6726MTR1PBF

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IRF6726MTR1PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF6726MTR1PBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Terminal Form: NO LEAD; No. of Elements: 1;
Datasheet IRF6726MTR1PBF Datasheet
In Stock487
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 260 mJ
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 32 A
Maximum Pulsed Drain Current (IDM): 250 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 30 V
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0017 ohm
Moisture Sensitivity Level (MSL): 1
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