Infineon Technologies - IRF7104

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IRF7104 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7104
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; No. of Terminals: 8;
Datasheet IRF7104 Datasheet
In Stock328
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.3 A
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 2 W
Maximum Drain-Source On Resistance: .25 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
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