Infineon Technologies - IRF7105

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IRF7105 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7105
Description N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 2.3 A; Maximum Operating Temperature: 150 Cel;
Datasheet IRF7105 Datasheet
In Stock222
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 2.3 A
Maximum Drain Current (Abs) (ID): 2.3 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
Moisture Sensitivity Level (MSL): 1
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