Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRF7105TRPBF |
| Description | N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .1 ohm; JEDEC-95 Code: MS-012AA; |
| Datasheet | IRF7105TRPBF Datasheet |
| In Stock | 20,082 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 3.5 A |
| Maximum Pulsed Drain Current (IDM): | 14 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | .1 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| JEDEC-95 Code: | MS-012AA |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 25 V |
| Additional Features: | ULTRA LOW RESISTANCE |
| Peak Reflow Temperature (C): | 260 |
