Infineon Technologies - IRF7306QPBF

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IRF7306QPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7306QPBF
Description P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRF7306QPBF Datasheet
In Stock697
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3.6 A
Maximum Drain Current (Abs) (ID): 3.6 A
Sub-Category: Other Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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