
Image shown is a representation only.
Manufacturer | Infineon Technologies |
---|---|
Manufacturer's Part Number | IRF7313PBF-1 |
Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 2; Maximum Drain Current (Abs) (ID): 6.5 A; |
Datasheet | IRF7313PBF-1 Datasheet |
In Stock | 179 |
NAME | DESCRIPTION |
---|---|
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 6.5 A |
JEDEC-95 Code: | MS-012AA |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Minimum DS Breakdown Voltage: | 30 V |
Maximum Power Dissipation (Abs): | 2 W |
No. of Elements: | 2 |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (Abs) (ID): | 6.5 A |
Maximum Drain-Source On Resistance: | .029 ohm |
Moisture Sensitivity Level (MSL): | 1 |