Infineon Technologies - IRF7313PBF-1

IRF7313PBF-1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7313PBF-1
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 2; Maximum Drain Current (Abs) (ID): 6.5 A;
Datasheet IRF7313PBF-1 Datasheet
In Stock179
NAME DESCRIPTION
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 6.5 A
JEDEC-95 Code: MS-012AA
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum DS Breakdown Voltage: 30 V
Maximum Power Dissipation (Abs): 2 W
No. of Elements: 2
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 6.5 A
Maximum Drain-Source On Resistance: .029 ohm
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
179 - -

Popular Products

Category Top Products