Infineon Technologies - IRF7379QTRPBF

  1. Home
  2. Infineon Technologies - IRF7379QTRPBF
IRF7379QTRPBF by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7379QTRPBF
Description N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 5.8 A; Maximum Drain Current (Abs) (ID): 5.8 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRF7379QTRPBF Datasheet
In Stock696
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2.5 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 5.8 A
Maximum Drain Current (Abs) (ID): 5.8 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
696 - -

Popular Products

Category Top Products

ZTX651M1 by Plessey Semiconductors Discrete Components Div

ZTX651M1

Plessey Semiconductors Discrete Components Div

Other Transistors;
TIP115 by Iskra Semic Capacitors Industry

TIP115

Iskra Semic Capacitors Industry

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
2N3019 by Semiconductors

2N3019

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
PZT2222A by Unisonic Technologies

PZT2222A

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;
TIP122 by Toshiba

TIP122

Toshiba

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
PZT2222A by North American Philips Discrete Products Div

PZT2222A

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;
TIP125 by Iskra Semic Capacitors Industry

TIP125

Iskra Semic Capacitors Industry

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP112 by Comset Semiconductors

TIP112

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
MMBT2222A by Weitron Technology

MMBT2222A

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BFT92WT/R by Philips Semiconductors

BFT92WT/R

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A; No. of Elements: 1;
BC847B by Vishay Intertechnology

BC847B

Vishay Intertechnology

Vishay Intertechnology's BC847B NPN transistor has a max power dissipation of 0.3W, min DC current gain of 200, and max operating temp of 150°C. Ideal for surface mount applications in electronics due to its single configuration and matte tin terminal finish.
TIP41C by Tt Electronics Plc

TIP41C

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
2N2907AUB by New England Semiconductor

2N2907AUB

New England Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
TIP42C by Jiangsu Changjiang Electronics Technology

TIP42C

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 6 A;
TIP32C by Silicon Group

TIP32C

Silicon Group

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP127 by Unisonic Technologies

TIP127

Unisonic Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Minimum DC Current Gain (hFE): 1000; No. of Elements: 1;
TIP50 by Intersil

TIP50

Intersil

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BC847C by Philips Semiconductors

BC847C

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC557B by Tt Electronics Plc

BC557B

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1;
BC856B by Jiangsu Changjiang Electronics Technology

BC856B

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;