Infineon Technologies - IRF7389TRPBF-1

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IRF7389TRPBF-1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7389TRPBF-1
Description N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 30 A; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
Datasheet IRF7389TRPBF-1 Datasheet
In Stock1,136
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 82 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: MS-012AA
Maximum Pulsed Drain Current (IDM): 30 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .029 ohm
Moisture Sensitivity Level (MSL): 1
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