Infineon Technologies - IRF7451TRPBF

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IRF7451TRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7451TRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 3.6 A; JESD-30 Code: R-PDSO-G8; Terminal Form: GULL WING;
Datasheet IRF7451TRPBF Datasheet
In Stock3,438
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 210 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.6 A
JEDEC-95 Code: MS-012AA
Maximum Pulsed Drain Current (IDM): 29 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 150 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .09 ohm
Moisture Sensitivity Level (MSL): 1
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