Infineon Technologies - IRF7478

IRF7478 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7478
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .026 ohm;
Datasheet IRF7478 Datasheet
In Stock657
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7 A
Maximum Pulsed Drain Current (IDM): 56 A
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .026 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 140 mJ
Maximum Feedback Capacitance (Crss): 37 pF
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
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