Infineon Technologies - IRF7524D1TRPBF

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IRF7524D1TRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7524D1TRPBF
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Drain Current (ID): 1.7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRF7524D1TRPBF Datasheet
In Stock146
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.25 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 1.7 A
Maximum Drain Current (Abs) (ID): 1.7 A
Sub-Category: Other Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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