IRF7530TRPBF-EL by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF7530TRPBF-EL
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 5.4 A; Minimum DS Breakdown Voltage: 20 V; Transistor Element Material: SILICON;
Datasheet	IRF7530TRPBF-EL Datasheet
In Stock	401

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	33 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	5.4 A
Maximum Pulsed Drain Current (IDM):	40 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	20 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-G8
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	ULTRA LOW RESISTANCE
Maximum Drain-Source On Resistance:	.03 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
401	-	-

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TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;