Infineon Technologies - IRF7910PBF-1

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IRF7910PBF-1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7910PBF-1
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 10 A; Maximum Drain Current (ID): 10 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRF7910PBF-1 Datasheet
In Stock240
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 10 A
Maximum Drain Current (Abs) (ID): 10 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

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