Infineon Technologies - IRF7910PBF

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IRF7910PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF7910PBF
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Terminals: 8; JESD-30 Code: R-PDSO-G8;
Datasheet IRF7910PBF Datasheet
In Stock449
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .015 ohm
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 12 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 10 A
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