Infineon Technologies - IRF8301MTRPBF

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IRF8301MTRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF8301MTRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Maximum Operating Temperature: 150 Cel; Case Connection: DRAIN;
Datasheet IRF8301MTRPBF Datasheet
In Stock2,900
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 34 A
Maximum Pulsed Drain Current (IDM): 250 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 89 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0015 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 260 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Additional Features: ULTRA LOW RESISTANCE
Maximum Drain Current (Abs) (ID): 192 A
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