IRF8852PBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF8852PBF
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Terminals: 8; Maximum Operating Temperature: 150 Cel;
Datasheet	IRF8852PBF Datasheet
In Stock	720

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	7.8 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0113 ohm
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	MO-153AA
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	25 V
Additional Features:	ULTRA LOW RESISTANCE
Maximum Drain Current (Abs) (ID):	7.8 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
720	-	-

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