IRF8910PBF-1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF8910PBF-1
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Minimum Operating Temperature: -55 Cel; Moisture Sensitivity Level (MSL): 1;
Datasheet	IRF8910PBF-1 Datasheet
In Stock	136

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	10 A
Maximum Pulsed Drain Current (IDM):	82 A
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	1.3 W
Maximum Drain-Source On Resistance:	.0134 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	19 mJ
Maximum Feedback Capacitance (Crss):	160 pF
JEDEC-95 Code:	MS-012AA
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	20 V
Maximum Drain Current (Abs) (ID):	10 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
136	-	-

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