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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IRF9310PBF-1 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; JEDEC-95 Code: MS-012AA; Operating Mode: ENHANCEMENT MODE; |
Datasheet | IRF9310PBF-1 Datasheet |
In Stock | 656 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Feedback Capacitance (Crss): | 880 pF |
Maximum Drain Current (ID): | 20 A |
JEDEC-95 Code: | MS-012AA |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -55 Cel |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 30 V |
Maximum Power Dissipation (Abs): | 2.5 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .0046 ohm |
Moisture Sensitivity Level (MSL): | 1 |