Infineon Technologies - IRF9530NS

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IRF9530NS by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF9530NS
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 56 A; Maximum Operating Temperature: 175 Cel;
Datasheet IRF9530NS Datasheet
In Stock1,042
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 14 A
Maximum Pulsed Drain Current (IDM): 56 A
Surface Mount: YES
Terminal Finish: MATTE TIN OVER NICKEL
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .2 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 250 mJ
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, HIGH RELIABILITY
Peak Reflow Temperature (C): 260
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