Infineon Technologies - IRFB4137PBF

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IRFB4137PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFB4137PBF
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 341 W; Maximum Drain Current (ID): 38 A; No. of Elements: 1;
Datasheet IRFB4137PBF Datasheet
In Stock830
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 341 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 38 A
Maximum Drain Current (Abs) (ID): 38 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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Pricing (USD)

Qty. Unit Price Ext. Price
830 $1.657 $1,375.310

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