Infineon Technologies - IRFD010

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IRFD010 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFD010
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Drain-Source On Resistance: .2 ohm; Maximum Drain Current (Abs) (ID): 1.7 A;
Datasheet IRFD010 Datasheet
In Stock599
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.7 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 4
Minimum DS Breakdown Voltage: 50 V
Maximum Power Dissipation (Abs): 1 W
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 1.7 A
Maximum Drain-Source On Resistance: .2 ohm
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