Infineon Technologies - IRFD213

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IRFD213 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFD213
Description N-CHANNEL; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE; Package Style (Meter): IN-LINE; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet IRFD213 Datasheet
In Stock785
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .45 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 150 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T3
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: 2.4 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
785 $0.618 $485.130

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