Infineon Technologies - IRFEA240

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IRFEA240 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFEA240
Description N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Additional Features: AVALANCHE RATED; Minimum DS Breakdown Voltage: 200 V;
Datasheet IRFEA240 Datasheet
In Stock336
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 44 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 28
Maximum Power Dissipation (Abs): 50 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-CQCC-N28
No. of Elements: 4
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .18 ohm
Avalanche Energy Rating (EAS): 80 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 11 A
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