Infineon Technologies - IRFF034

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IRFF034 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFF034
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 65 A;
Datasheet IRFF034 Datasheet
In Stock666
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 16.2 A
Maximum Pulsed Drain Current (IDM): 65 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 25 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .05 ohm
JEDEC-95 Code: TO-205AF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 16.2 A
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