Infineon Technologies - IRFI4019H-117P

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IRFI4019H-117P by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFI4019H-117P
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 18 W; Maximum Drain-Source On Resistance: .095 ohm; Package Shape: RECTANGULAR;
Datasheet IRFI4019H-117P Datasheet
In Stock84
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 8.7 A
Maximum Pulsed Drain Current (IDM): 34 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 5
Maximum Power Dissipation (Abs): 18 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .095 ohm
Avalanche Energy Rating (EAS): 77 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 150 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 8.7 A
Peak Reflow Temperature (C): NOT SPECIFIED
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