Infineon Technologies - IRFK4H351

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IRFK4H351 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFK4H351
Description Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (ID): 50 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
Datasheet IRFK4H351 Datasheet
In Stock326
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 500 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 50 A
Maximum Drain Current (Abs) (ID): 50 A
Sub-Category: FET General Purpose Power
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