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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IRFM9140PBF |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Package Shape: SQUARE; Minimum Operating Temperature: -55 Cel; |
Datasheet | IRFM9140PBF Datasheet |
In Stock | 568 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 120 ns |
Maximum Drain Current (ID): | 18 A |
Maximum Pulsed Drain Current (IDM): | 72 A |
Surface Mount: | NO |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 125 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
Maximum Turn Off Time (toff): | 150 ns |
JESD-30 Code: | S-XSFM-P3 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | PIN/PEG |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .22 ohm |
Avalanche Energy Rating (EAS): | 500 mJ |
JEDEC-95 Code: | TO-254AA |
Polarity or Channel Type: | P-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 100 V |
Additional Features: | HIGH RELIABILITY |
Maximum Drain Current (Abs) (ID): | 18 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |